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Part Number : 2SA1162S-Y,LF
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : 2SA1162S-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : 2SA1162S-Y,LF More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.00
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : PNP
Case/Package : SOT-23-3
Max Breakdown Voltage : 50 V
Max Power Dissipation : 150 mW
Emitter Base Voltage (VEBO) : -5 V
Collector Emitter Breakdown Voltage : 50 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty : 184 In Stock
Applications : Aerospace & defense Grid infrastructure Portable electronics
hFE Min : 70
Packaging : Cut Tape (CT)
Transition Frequency : 80 MHz
Max Collector Current : 150 mA
Gain Bandwidth Product : 80 MHz
Collector Emitter Voltage (VCEO) : 300 mV
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